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  4. Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate
 
research article

Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate

Cosendey, Gatien  
•
Castiglia, Antonino  
•
Rossbach, Georg  
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2012
Applied Physics Letters

We report on III-nitride based blue vertical cavity surface emitting lasers using defect-free highly reflective AlInN/GaN distributed Bragg reflectors grown on c-plane free-standing GaN substrates. Lasing is demonstrated at room temperature under pulsed electrical injection. The high lasing threshold current density still prevents devices from continuous wave lasing because of large self-heating. The reasons for such a high threshold are discussed and we show that it mainly comes from large light absorption in the indium tin oxide current spreading layer. Properly tuning both its thickness and its position with respect to the electrical field could remarkably decrease the threshold. © 2012 American Institute of Physics.

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Type
research article
DOI
10.1063/1.4757873
Web of Science ID

WOS:000310304900013

Author(s)
Cosendey, Gatien  
Castiglia, Antonino  
Rossbach, Georg  
Carlin, Jean-Francois  
Grandjean, Nicolas  
Date Issued

2012

Publisher

American Institute of Physics

Published in
Applied Physics Letters
Volume

101

Issue

15

Article Number

151113

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LASPE  
Available on Infoscience
February 27, 2013
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/89381
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