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research article
RF Compact Modeling of High-voltage MOSFETs
The High-Voltage MOSFET is used in a wide variety of applications covering from power systems up to RF-IC. Compact models that describe the high-frequency behavior of the device are required to predict high-frequency operation and switching capabilities of these elements in HV state-of-the-art systems. In this paper, an RF model is presented and verified against extensive Y-parameter measurements, which were carried out on a long channel Lateral double-Diffusion MOS device. Assessment of the model with measurements confirms the validity of this approach.
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Name
IETEJRes_2012_58_3_214_97329.pdf
Type
Postprint
Access type
openaccess
Size
1.03 MB
Format
Adobe PDF
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