RF Compact Modeling of High-voltage MOSFETs

The High-Voltage MOSFET is used in a wide variety of applications covering from power systems up to RF-IC. Compact models that describe the high-frequency behavior of the device are required to predict high-frequency operation and switching capabilities of these elements in HV state-of-the-art systems. In this paper, an RF model is presented and verified against extensive Y-parameter measurements, which were carried out on a long channel Lateral double-Diffusion MOS device. Assessment of the model with measurements confirms the validity of this approach.


Published in:
IETE Journal of Research, 58, 3, 214
Year:
2012
Publisher:
Mumbai, Medknow Publications
ISSN:
0377-2063
Keywords:
Laboratories:




 Record created 2012-09-25, last modified 2018-01-28

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