Design-dependent gauge factors of highly doped n-type 4H-SiC piezoresistors

This paper presents the experimentally obtained gauge factor (GF) of 4H-SiC piezoresistors, fabricated out of the n-type epitaxial layer and characterized on millimeter-size SiC cantilever beams at room temperature. It was found that the GF is dependent on the piezoresistor's length and width. Piezoresistors narrower than approximately 30 mu m showed a width-dependent GF. The highest GF of 20.8 was obtained with a single element piezoresistor in transverse orientation. In longitudinal orientation, the highest GF was -10, which was obtained with a clustered piezoresistor with plural identical elements. Essential factors to consider for the design of optimum 4H-SiC piezoresistors for a Wheatstone bridge configuration are presented.


Published in:
Journal of Micromechanics and Microengineering, 22, 8, 085034
Year:
2012
ISSN:
1361-6439
Laboratories:




 Record created 2012-08-23, last modified 2018-03-17


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