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conference paper
Atomic Layer Deposition for Novel Dye-Sensitized Solar Cells
2011
Atomic Layer Deposition Applications 7
Herein we present the latest fabrication and characterization techniques for atomic layer deposition of Al2O3, ZnO, SnO2, Nb2O5, HfO2, Ga2O3 and TiO2 for research on dye-sensitized solar cell. In particular, we review the fabrication of state-of-the-art 3D host-passivation-guest photoanodes and ZnO nanowires as well as characterize the deposited thin films using spectroscopic ellipsometry, X-ray diffraction, Hall effect, J-V curves and electrochemical impedance spectroscopy.
Type
conference paper
Web of Science ID
WOS:000305937200033
Authors
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Arsenault, E.
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Ozin, G. A.
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Publication date
2011
Published in
Atomic Layer Deposition Applications 7
ISBN of the book
978-1-60768-256-1
Publisher place
Pennington
Total of pages
12
Series title/Series vol.
ECS Transactions
Volume
41
Start page
303
End page
314
Peer reviewed
NON-REVIEWED
EPFL units
Event name | Event place | Event date |
Boston, MA | Oct 10-12, 2011 | |
Available on Infoscience
August 17, 2012
Use this identifier to reference this record