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research article
InAlN/GaN HEMTs for Operation in the 1000 degrees C Regime: A First Experiment
GaN-based heterostructures, and here, particularly, the lattice matched InAlN/GaN configuration, possess high chemical and thermal stability. Concentrating on refractory metal contact schemes, HEMT devices have been fabricated allowing high-temperature 1-MHz large-signal operation at 1000 degrees C ( in vacuum) for 25 h. Despite slow gate contact degradation, major degradation of the heterostructure could not be observed. Extrapolation of the RF characteristics suggests that operation up to gigahertz frequencies at this temperature may be feasible.
Type
research article
Web of Science ID
WOS:000305835300023
Authors
Maier, D.
•
Alomari, M.
•
•
•
Diforte-Poisson, M.-A.
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Dua, C.
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Delage, S.
•
Kohn, E.
Publication date
2012
Published in
Volume
33
Start page
985
End page
987
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
July 27, 2012
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