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conference paper
First principles study of electronic and structural properties of the Ge/GeO2 interface
2012
Physica B-Condensed Matter
The electronic and structural properties of the Ge/GeO2 interface are addressed through a density functional simulation scheme which includes the use of hybrid functionals for achieving accurate band gaps, band offsets and defect levels. The present work discusses the germanium dangling bond levels, the thermodynamics of GeOx, the stability of the oxygen vacancy across Ge/HfO2 interfaces, the atomic structure of GeOx, electron and hole trapping in GeOx, and the band alignment at the Ge/GeO2 interface. (C) 2011 Elsevier B.V. All rights reserved.
Type
conference paper
Web of Science ID
WOS:000305790800027
Authors
Publication date
2012
Published in
Physica B-Condensed Matter
Volume
407
Start page
2926
End page
2931
Peer reviewed
NON-REVIEWED
EPFL units
Event name | Event place | Event date |
Nelson, NEW ZEALAND | Jul 18-22, 2011 | |
Available on Infoscience
July 27, 2012
Use this identifier to reference this record