First principles study of electronic and structural properties of the Ge/GeO2 interface

The electronic and structural properties of the Ge/GeO2 interface are addressed through a density functional simulation scheme which includes the use of hybrid functionals for achieving accurate band gaps, band offsets and defect levels. The present work discusses the germanium dangling bond levels, the thermodynamics of GeOx, the stability of the oxygen vacancy across Ge/HfO2 interfaces, the atomic structure of GeOx, electron and hole trapping in GeOx, and the band alignment at the Ge/GeO2 interface. (C) 2011 Elsevier B.V. All rights reserved.


Published in:
Physica B-Condensed Matter, 407, 2926-2931
Presented at:
26th International Conference on Defects in Semiconductors (ICDS), Nelson, NEW ZEALAND, Jul 18-22, 2011
Year:
2012
Keywords:
Laboratories:




 Record created 2012-07-27, last modified 2018-03-17


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