TCAD Simulation of SOI TFETs and Calibration of Non-local Band-to-Band Tunneling Model

This paper reports a simulation based study of the non-local tunneling model using a commercially available technology computer-aided design (TCAD) device simulator. Single gate Tunnel FET devices with 400nm gate length based on SOI technology are measured and compared with simulated data. A step by step algorithm to calibrate the nonlocal Band-to-Band tunneling model implemented in Synopsys Sentaurus TCAD has been shown, demonstrating the importance of model parameters. By using only the reduced mass as the fitting parameter we have obtained a physically meaningful fit with the measured data. The dependence of the tunneling generation rate on the different crystallographic directions is also demonstrated for the first time.


Published in:
Microelectronic Engineering, 98, 334–337
Year:
2012
Publisher:
Amsterdam, Elsevier
ISSN:
0167-9317
Keywords:
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 Record created 2012-07-11, last modified 2018-10-07

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