Bended gate-all-around nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress

In this paper we investigate the mobility enhancement due to strain in bended NW MOSFETs. Stress of 200MPa to 2GPa, induced by thermal oxidation, is measured in suspended NW FETs by Raman spectroscopy. Mobility enhancement of more than 100% is observed. Performance gain of bended compared to non-bended structures is most pronounced in low field conditions and at low temperatures.


Published in:
2007 Ieee International Electron Devices Meeting, Vols 1 And 2, 191-194
Presented at:
IEEE International Electron Devices Meeting, Washington, DC, Dec 10-12, 2007
Year:
2007
Publisher:
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa
ISBN:
978-1-4244-1507-6
Keywords:
Laboratories:




 Record created 2012-07-04, last modified 2018-03-17


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