Plasma diagnostics as a tool for process optimization: the case of microcrystalline silicon deposition

Properties of thin films such as the crystallinity of silicon deposited from SiH4 - H-2 discharges are governed by the plasma composition. Therefore, it is crucial to measure the plasma composition in order to understand and optimize the deposition rate, deposition efficiency and material quality of thin film deposition, such as for microcrystalline silicon, which is a key material for silicon thin film photovoltaic solar cells. This task can be performed by using Fourier transform infrared absorption spectroscopy or optical emission spectroscopy. This work compares these two techniques and shows their range of applicability and their limitations.


Published in:
Plasma Physics And Controlled Fusion, 49, B411-B418
Presented at:
34th European-Physical-Society Conference on Plasma Physics, Warsaw, POLAND, Jul 02-06, 2007
Year:
2007
Keywords:
Laboratories:
SPC
CRPP




 Record created 2012-07-04, last modified 2018-01-28


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