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research article
Control of the Screening Ability at a Ferroelectric-Semiconductor Interface
2011
Recent progress in integrating ferroelectrics directly on silicon opens the exciting possibility of implementing ferroelectric-semiconductor devices [1]. One of the major problems for such integration is the instability of the ferroelectric state in very thin films, which is mainly controlled by the screening ability of the ferroelectric-semiconductor interface. We show here that the difference in ferroelectric-semiconductor work function can strongly influence the screening ability of the interface. The work function difference can be controlled by choosing the materials carefully.
Type
research article
Web of Science ID
WOS:000298541800005
Authors
Publication date
2011
Published in
Volume
419
Start page
20
End page
22
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
June 12, 2012
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