000177278 001__ 177278
000177278 005__ 20180913061250.0
000177278 0247_ $$2doi$$a10.1016/j.sse.2012.04.016
000177278 022__ $$a0038-1101
000177278 02470 $$2ISI$$a000305728600015
000177278 037__ $$aARTICLE
000177278 041__ $$aeng
000177278 245__ $$aThe electron–hole bilayer tunnel FET
000177278 260__ $$bElsevier$$c2012
000177278 269__ $$a2012
000177278 336__ $$aJournal Articles
000177278 520__ $$aWe propose a novel tunnel field-effect transistor (TFET) concept called the electron–hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron–hole bilayer in order to achieve improved switching and higher drive currents when compared to a lateral p–i–n junction TFET. The device principle and performances are studied by 2D numerical simulations. Output and transfer characteristics, as well as the impact of back gate bias, silicon thickness and gate length on the device behavior are evaluated. Device performances are compared for Si and Ge implementations. Nearly ideal average subthreshold slope (SSavg ∼ 10 mV/dec over 7 decades of current) and Ion/Ioff > 10^8 at Vd = Vg = 0.5 V are obtained, due to the OFF–ON binary transition which leads to the abrupt onset of the band-to-band tunneling inside the semiconductor channel. Remarkably, for Ge EHBTFETs the Ion (∼11 μA/μm at Vdd = 0.5 V) is 10× larger than in Ge tunnel FETs and 380× larger than in Si EHBTFETs.
000177278 6531_ $$aBand-to-band tunneling, EHBTFET, Electron–hole bilayer, Field-effect transistor, Logic devices, Silicon–germanium, Subthreshold slope, Tunnel FET, Tunnel transistor
000177278 700__ $$0244761$$aLattanzio, Livio$$g181885
000177278 700__ $$0244760$$aDe Michielis, Luca$$g174139
000177278 700__ $$0241430$$aIonescu, Adrian M.$$g122431
000177278 773__ $$j74$$q85-90$$tSolid-State Electronics
000177278 909C0 $$0252177$$pNANOLAB$$xU10328
000177278 909CO $$ooai:infoscience.tind.io:177278$$pSTI$$particle
000177278 917Z8 $$x181885
000177278 917Z8 $$x181885
000177278 937__ $$aEPFL-ARTICLE-177278
000177278 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000177278 980__ $$aARTICLE