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research article
1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser
2012
We demonstrate an optically pumped semiconductor disk laser operating at 1580 nm with 4.6 W of output power, which represents the highest output power reported from this type of laser. 1 W of output power at 785 nm with nearly diffraction-limited beam has been achieved from this laser through intracavity frequency doubling, which offers an attractive alternative to Ti:sapphire lasers and laser diodes in a number of applications, e.g., in spectroscopy, atomic cooling and biophotonics. (C)2012 Optical Society of America
Type
research article
Web of Science ID
WOS:000302855500082
Authors
Rantamäki, Antti
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Rautiainen, Jussi
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Lyytikäinen, Jari
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•
•
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Okhotnikov, Oleg G.
Publication date
2012
Publisher
Published in
Volume
20
Issue
8
Article Number
9046
Peer reviewed
NON-REVIEWED
EPFL units
Available on Infoscience
May 2, 2012
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