Kinetics of a-Si:H bulk defect and a-Si:H/c-Si interface-state reduction

Low-temperature annealing of hydrogenated amorphous silicon (a-Si:H) is investigated. An identical energy barrier is found for the reduction of deep defects in the bulk of a-Si:H films and at the interface such layers form with crystalline Si (c-Si) surfaces. This finding gives direct physical evidence that the defects determining a-Si:H/c-Si interface recombination are silicon dangling bonds and that also kinetically this interface has no unique features compared to the a-Si:H bulk.


Published in:
Physical Review B, 85, -
Year:
2012
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IMT-NE Number: 654
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 Record created 2012-04-12, last modified 2018-03-17

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