Journal article

High quality factor two dimensional GaN photonic crystal cavity membranes grown on silicon substrate

We report on the achievement of freestanding GaN photonic crystal L7 nanocavities with embedded InGaN/GaN quantum wells grown by metal organic vapor phase epitaxy on Si (111). GaN was patterned by e-beam lithography, using a SiO2 layer as a hard mask, and usual dry etching techniques. The membrane was released by underetching the Si (111) substrate. Micro-photoluminescence measurements performed at low temperature exhibit a quality factor as high as 5200 at similar to 420 nm, a value suitable to expand cavity quantum electrodynamics to the near UV and the visible range and to develop nanophotonic platforms for biofluorescence spectroscopy. (C) 2012 American Institute of Physics. [doi:10.1063/1.3684630]


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