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research article
Finite-temperature flexoelectricity in ferroelectric thin films from first principles
2012
A first-principles-based effective Hamiltonian technique is developed to study flexoelectricity in (Ba0.5Sr0.5)TiO3 thin films of different thicknesses in their paraelectric phase. The magnitude as well as sign of individual components of the flexoelectric tensor are reported, which provides answers to existing controversies. The use of this numerical tool also allows us to show that flexoelectric coefficients depend strongly on the film's thickness and temperature. Such dependence is explained using the relationship between the flexoelectric coefficients and the dielectric susceptibility.
Type
research article
Web of Science ID
WOS:000301111900004
Authors
Publication date
2012
Published in
Volume
85
Issue
10
Article Number
104101
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
April 5, 2012
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