Devices have been fabricated based on the bilayer manganite La1.4Sr1.6Mn2O7, which in the bulk state orders magnetically below 90 K, at which point both in-plane and c-axis bulk resistivity decrease by 2-3 orders of magnitude. We provide an optimized procedure to fabricate devices to electrical transport in- and out of plane. Fabricated mesoscopic devices have dimensions comparable to a typical magnetic domain, allowing us to study structures going from a single domain to several domains.