Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part I: Impedance Analysis

Complementary MOS device electrical performances are considerably affected by the degradation of the oxide lay- ers and Si/SiO2 interfaces. A general expression for electrically stressed MOS impedance has been derived and applied within the nonradiative multiphonon theory of carrier capture/emission at oxide defects. The capacitance and the conductance of aged MOS field-effect transistor oxides, and their dependences on bias voltage, temperature, and stress conditions have been investigated.


Published in:
IEEE Transactions on Electron Devices, 59, 3, 610-620
Year:
2012
Publisher:
Institute of Electrical and Electronics Engineers
ISSN:
0018-9383
Keywords:
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 Record created 2012-03-08, last modified 2018-09-13

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