Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part I: Impedance Analysis

Garetto, Davide; Randriamihaja, Yoann Mammy; Rideau, Denis; Zaka, Alban; Schmid, Alexandre; Leblebici, Yusuf; Jaouen, Hervé

doi:10.1109/TED.2011.2181388

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part I: Impedance Analysis

Garetto, Davide ; Randriamihaja, Yoann Mammy ; Rideau, Denis ; Zaka, Alban[...]

Complementary MOS device electrical performances are considerably affected by the degradation of the oxide lay- ers and Si/SiO2 interfaces. A general expression for electrically stressed MOS impedance has been derived and applied within the nonradiative multiphonon theory of carrier capture/emission at oxide defects. The capacitance and the conductance of aged MOS field-effect transistor oxides, and their dependences on bias voltage, temperature, and stress conditions have been investigated.

Published in:

IEEE Transactions on Electron Devices, 59, 3, 610-620

Year:

2012

Publisher:

Institute of Electrical and Electronics Engineers

ISSN:

0018-9383

Keywords:

Charge trapping ; impedance characterization ; multiphonon-assisted (MPA) capture ; oxide degradation

DOI:

10.1109/TED.2011.2181388