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  4. Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part I: Impedance Analysis
 
research article

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part I: Impedance Analysis

Garetto, Davide  
•
Randriamihaja, Yoann Mammy
•
Rideau, Denis
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2012
IEEE Transactions on Electron Devices

Complementary MOS device electrical performances are considerably affected by the degradation of the oxide lay- ers and Si/SiO2 interfaces. A general expression for electrically stressed MOS impedance has been derived and applied within the nonradiative multiphonon theory of carrier capture/emission at oxide defects. The capacitance and the conductance of aged MOS field-effect transistor oxides, and their dependences on bias voltage, temperature, and stress conditions have been investigated.

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