Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part I: Impedance Analysis

• Published in: IEEE Transactions on Electron Devices (ISSN: 0018-9383), vol. 59, num. 3, p. 610-620
• Institute of Electrical and Electronics Engineers, 2012

Complementary MOS device electrical performances are considerably affected by the degradation of the oxide lay- ers and Si/SiO2 interfaces. A general expression for electrically stressed MOS impedance has been derived and applied within the nonradiative multiphonon theory of carrier capture/emission at oxide defects. The capacitance and the conductance of aged MOS field-effect transistor oxides, and their dependences on bias voltage, temperature, and stress conditions have been investigated.

Keywords: Charge trapping ; impedance characterization ; multiphonon-assisted (MPA) capture ; oxide degradation

Reference

• EPFL-ARTICLE-175488
• doi:10.1109/TED.2011.2181388
• View record in Web of Science

Record created on 2012-03-08, modified on 2017-05-10