legacy-id: 175171 may refer to multiple records
- Some of the metrics are blocked by yourconsent settings
Publication Comparison of vacancy and antisite defects in GaAs and InGaAs through hybrid functionals
(2012); The formation energies and charge transition levels of vacancy and antisite defects in GaAs and In0.5Ga0.5As are calculated through hybrid density functionals. In As-rich conditions, the As antisite is the most stable defect in both GaAs and InGaAs, except for n-type GaAs for which the Ga vacancy is favored. The Ga antisite shows the lowest formation energy in Ga-rich conditions. The As antisite provides a consistent interpretation of the defect densities measured at mid-gap for both GaAs/oxide and InGaAs/oxide interfaces.
WOS© Citations 53Scopus© Citations 57 2 - Some of the metrics are blocked by yourconsent settings
Publication Comparison of vacancy and antisite defects in GaAs and InGaAs through hybrid functionals
(2012-01-03); The formation energies and charge transition levels of vacancy and antisite defects in GaAs and In0.5Ga0.5As are calculated through hybrid density functionals. In As-rich conditions, the As antisite is the most stable defect in both GaAs and InGaAs, except for n-type GaAs for which the Ga vacancy is favored. The Ga antisite shows the lowest formation energy in Ga-rich conditions. The As antisite provides a consistent interpretation of the defect densities measured at mid-gap for both GaAs/oxide and InGaAs/oxide interfaces.