Local stressors to accommodate 1.2 to 5.6 GPa uniaxial tensile stress in suspended gate-all-around Si nanowire nMOSFETs by elastic local buckling

In this paper, we demonstrate the integration of local oxidation and metal-gate strain technologies to induce 3.3%/5.6 GPa uniaxial tensile strain/stress in 2 μm long suspended Si nanowire MOSFETs, the highest process-based stress record in MOSFETs until now, by elastic local buckling. Significant stress level modulation in the channel from 1.2 to 5.6 GPa on a single wafer is demonstrated for the first time by varying the NW width. The GAA Si NW MOSFET with 5.6 GPa uniaxial tensile stress is characterized and the electron mobility enhancement is reported.


Published in:
Semiconductor Device Research Symposium (ISDRS), 2011 International, 1-2
Presented at:
International Semiconductor Device Research Symposium (IEEE ISDRS, biennial), University of Maryland, College Park, MD, USA, December 7-9, 2011
Year:
2011
ISBN:
978-1-4577-1755-0
Keywords:
Laboratories:




 Record created 2012-01-13, last modified 2018-01-28

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