Electronic structural details of donor-vacancy complexes in Si-doped Ge and Ge-doped Si

We present a detailed picture of the electronic structure of donor-vacancy complexes in Ge-doped silicon and Si-doped germanium Clusters to mimic Si-rich and Ge-rich SiGe alloys, respectively Jahn-Teller effects and electrical levels were investigated in both Si-rich and Ge-rich end compositions It is shown that while Ge atoms act as efficient traps for mobile E-centers in Si-rich alloys, Si atoms in Ge-rich material do not have this ability A detailed linear combination of atomic orbitals model is proposed for VP-Ge and VP-Si complexes in Si1-xGex and Ge1-xSix, where the orbital filling order is driven by the larger electron affinity of Si atoms when compared to Ge. (C) 2009 Elsevier B.V. All rights reserved

Published in:
Thin Solid Films, 518, 2381-2385
Presented at:
Symposium on Silicon and Germanium Issues for Future CMOS Devices held at the 2009 E-MRS Spring Meeting, Strasbourg, FRANCE, Jun 08-12, 2009

 Record created 2011-12-16, last modified 2018-09-13

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