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research article

RTS Noise Characterization in Single-Photon Avalanche Diodes

Karami, Mohammad Azim
•
Carrara, Lucio  
•
Niclass, Cristiano  
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2010
IEEE Electron Device Letters

Random telegraph signal (RTS) behavior is reported and characterized in the dark count rate of single-photon avalanche Diodes (SPADs). The RTS is observed in a SPAD fabricated in 0.8-mu m CMOS technology and in four proton-irradiated SPADs designed and fabricated in 0.35-mu m CMOS technology. The RTS characteristics are evaluated experimentally and verified theoretically with respect to bias and temperature.

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Type
research article
DOI
10.1109/LED.2010.2047234
Web of Science ID

WOS:000281833100020

Author(s)
Karami, Mohammad Azim
Carrara, Lucio  
Niclass, Cristiano  
Fishburn, Matthew
Charbon, Edoardo  
Date Issued

2010

Publisher

Institute of Electrical and Electronics Engineers

Published in
IEEE Electron Device Letters
Volume

31

Start page

692

End page

694

Subjects

Dark count rate (DCR)

•

random telegraph signal (RTS)

•

single-photon avalanche diodes (SPADs)

•

Random Telegraph Signals

•

Proton-Irradiated Ccds

•

Defects

•

Sensor

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

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December 16, 2011
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/75161
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