RTS Noise Characterization in Single-Photon Avalanche Diodes

Random telegraph signal (RTS) behavior is reported and characterized in the dark count rate of single-photon avalanche Diodes (SPADs). The RTS is observed in a SPAD fabricated in 0.8-mu m CMOS technology and in four proton-irradiated SPADs designed and fabricated in 0.35-mu m CMOS technology. The RTS characteristics are evaluated experimentally and verified theoretically with respect to bias and temperature.


Published in:
Ieee Electron Device Letters, 31, 692-694
Year:
2010
Publisher:
Institute of Electrical and Electronics Engineers
ISSN:
0741-3106
Keywords:
Laboratories:




 Record created 2011-12-16, last modified 2018-09-13


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