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research article
205-GHz (Al,In)N/GaN HEMTs
We report 55-nm gate AlInN/GaN high-electron-mobility transistors (HEMTs) featuring a short-circuit current gain cutoff frequency of f(T) = 205 GHz at room temperature, a new record for GaN-based HEMTs. The devices source a maximum current density of 2.3 A/mm at V-GS = 0 V and show a measured transconductance of 575 mS/mm, which is the highest value reported to date for nonrecessed gate nitride HEMTs. Comparison to state-of-the-art thin-barrier AlGaN/GaN HEMTs suggests that AlInN/GaN devices benefit from an advantageous channel velocity under high-field transport conditions.
Type
research article
Web of Science ID
WOS:000283185500019
Authors
Sun, Haifeng
•
Alt, Andreas R.
•
Benedickter, Hansruedi
•
Feltin, Eric
•
•
Gonschorek, Marcus
•
•
Bolognesi, C. R.
Publication date
2010
Published in
Volume
31
Start page
957
End page
959
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
December 16, 2011
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