Mechanisms of wafer sawing and impact on wafer properties

Silicon wafer wire-sawing experiments were realized with different sets of sawing parameters, and the thickness, roughness, and cracks depth of the wafers were measured. The results are discussed in relation to assumptions underlying the rolling-indenting model, which describes the process. It was also found that the silicon surface at the bottom of the sawing groove is different from the wafer surface, implying different sawing conditions in the two positions. Furthermore, the measured parameters were found to vary along the wire direction, between the entrance of the wire in the ingot and its exit. Based on these observations, some improvements for the wire-sawing model are discussed. Copyright (C) 2010 John Wiley & Sons, Ltd.


Published in:
Progress In Photovoltaics, 18, 563-572
Year:
2010
Publisher:
Wiley-Blackwell
ISSN:
1062-7995
Keywords:
Note:
IMT-NE Number: 648
Laboratories:


Note: The status of this file is: EPFL only


 Record created 2011-12-16, last modified 2018-03-17

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