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research article
Testing the Temperature Limits of GaN-Based HEMT Devices
The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility transistors (HEMTs) have failed in an operating temperature range of 500 degrees C, InAlN/GaN HEMTs have been operated up to 900 degrees C for 50 h (in vacuum). Failure is thought to be still contact metallization stability related, indicating an extremely robust InAlN/GaN heterostructure configuration.
Type
research article
Web of Science ID
WOS:000286680000003
Authors
Maier, David
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Alomari, Mohammed
•
•
•
di Forte-Poisson, Marie-Antoinette
•
Dua, Christian
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Chuvilin, Andrey
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Troadec, David
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Gaquiere, Christophe
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Kaiser, Ute
Publication date
2010
Volume
10
Start page
427
End page
436
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
December 16, 2011
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