Testing the Temperature Limits of GaN-Based HEMT Devices
The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility transistors (HEMTs) have failed in an operating temperature range of 500 degrees C, InAlN/GaN HEMTs have been operated up to 900 degrees C for 50 h (in vacuum). Failure is thought to be still contact metallization stability related, indicating an extremely robust InAlN/GaN heterostructure configuration.
Keywords: GaN heterostructures ; high-temperature electronics ; InAlN/GaN high-electron mobility transistor (HEMT) ; reliability ; Electron-Mobility Transistors ; N-Type Gan ; Algan/Gan Hfets ; Reliability ; Heterostructures ; Degradation ; Performance ; Stability ; Oxidation ; Contacts
Record created on 2011-12-16, modified on 2016-08-09