Testing the Temperature Limits of GaN-Based HEMT Devices

The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility transistors (HEMTs) have failed in an operating temperature range of 500 degrees C, InAlN/GaN HEMTs have been operated up to 900 degrees C for 50 h (in vacuum). Failure is thought to be still contact metallization stability related, indicating an extremely robust InAlN/GaN heterostructure configuration.


Published in:
Ieee Transactions On Device And Materials Reliability, 10, 427-436
Year:
2010
Keywords:
Laboratories:




 Record created 2011-12-16, last modified 2018-09-13


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