Enhancement of microcrystalline n-i-p solar cell performance via use of pre-covering layers and H-2 treatment
Sweetnam, Sean; Soederstroem, Thomas; Haug, Franz-Josef; Cubero, Oscar; Niquille, Xavier; Terrazzoni-Daudrix, Vanessa; Ballif, Christophe
2011
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Abstract

We study the effects of a-Si:H and mu c-Si:H covering layers and an H-2 treatment on the characteristics of mu c-Si:H thin film solar cells deposited in open single chamber very high frequency plasma enhanced chemical vapor deposition systems. Secondary ion mass spectrometry is used to evaluate the phosphor concentration in the mu c-Si:H material. Compared to use of an a-Si:H covering layer, use of a pc-Si:H covering layer reduces dopant contamination by a relative 50%, and improves efficiency by a relative 6%, and use of an H-2 treatment reduces dopant contamination by a relative 64%, and improves efficiency by a relative 17%. (C) 2011 Elsevier B.V. All rights reserved.

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Title Enhancement of microcrystalline n-i-p solar cell performance via use of pre-covering layers and H-2 treatment
Author(s) Sweetnam, Sean ; Soederstroem, Thomas ; Haug, Franz-Josef ; Cubero, Oscar ; Niquille, Xavier ; Terrazzoni-Daudrix, Vanessa ; Ballif, Christophe
Published in Thin Solid Films
Volume 519
Pages 5567-5570
Date 2011
Publisher Elsevier
ISSN 0040-6090
Keywords
Note IMT-NE Number: 646
DOI 10.1016/j.tsf.2011.03.011
Other identifier(s) View record in Web of Science
Laboratories PV-LAB
Record Appears in Scientific production and competences > STI - School of Engineering > IMT - Institute of Microengineering > PV-LAB - Photovoltaics and Thin Film Electronics Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
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