Improved Screening Ability of Ferroelectric-Semiconductor Interface

• Presented at: Joint Meeting of the 19th IEEE International Symposium on the Applications of Ferroelectrics/10th European Conference on the Applications of Polar Dielectrics, Edinburgh, SCOTLAND, Aug 09-12, 2010
• Published in: Ieee Transactions On Ultrasonics Ferroelectrics And Frequency Control, vol. 58, p. 1959-1961
• Publication date: 2011

Recent progress in integrating ferroelectrics directly on silicon opens the exciting possibility of implementing ferroelectric-semiconductor devices. One of the major problems for such integration is the instability of the ferroelectric state in very thin films, which is mainly controlled by the screening ability of the ferroelectric-semiconductor interface. We show here that the presence of built-in potential in the semiconductor can strongly influence the screening ability of the interface. The built-in potential depends on the electron affinities and surface states density and can be controlled by choosing the materials carefully.

Keywords: Films ; Oxide

Reference

• EPFL-CONF-170924
• doi:10.1109/TUFFC.2011.2037
• View record in Web of Science

Record created on 2011-12-16, modified on 2017-05-10