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  4. Improved Screening Ability of Ferroelectric-Semiconductor Interface
 
conference paper

Improved Screening Ability of Ferroelectric-Semiconductor Interface

Gureev, Maxim Y.
•
Tagantsev, Alexander K.
•
Setter, Nava  
2011
Ieee Transactions On Ultrasonics Ferroelectrics And Frequency Control
Joint Meeting of the 19th IEEE International Symposium on the Applications of Ferroelectrics/10th European Conference on the Applications of Polar Dielectrics

Recent progress in integrating ferroelectrics directly on silicon opens the exciting possibility of implementing ferroelectric-semiconductor devices. One of the major problems for such integration is the instability of the ferroelectric state in very thin films, which is mainly controlled by the screening ability of the ferroelectric-semiconductor interface. We show here that the presence of built-in potential in the semiconductor can strongly influence the screening ability of the interface. The built-in potential depends on the electron affinities and surface states density and can be controlled by choosing the materials carefully.

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Type
conference paper
DOI
10.1109/TUFFC.2011.2037
Web of Science ID

WOS:000295101600031

Author(s)
Gureev, Maxim Y.
Tagantsev, Alexander K.
Setter, Nava  
Date Issued

2011

Published in
Ieee Transactions On Ultrasonics Ferroelectrics And Frequency Control
Volume

58

Start page

1959

End page

1961

Subjects

Films

•

Oxide

Editorial or Peer reviewed

NON-REVIEWED

Written at

EPFL

EPFL units
LC  
Event nameEvent placeEvent date
Joint Meeting of the 19th IEEE International Symposium on the Applications of Ferroelectrics/10th European Conference on the Applications of Polar Dielectrics

Edinburgh, SCOTLAND

Aug 09-12, 2010

Available on Infoscience
December 16, 2011
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/73539
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