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research article
Fully Passivated AlInN/GaN HEMTs With f(T)/f(MAX) of 205/220 GHz
We report the fabrication and characterization of 30-nm-gate fully passivated AlInN/GaN high-electron mobility transistors (HEMTs) with cutoff frequencies f(T) and f(MAX) simultaneously exceeding 200 GHz at a given bias point. The current gain cutoff frequency does not vary significantly for 2.5 < V-DS < 10 V, while f(MAX) reaches a maximum value of f(MAX) = 230 GHz at V-DS = 6 V. This is the first realization of fully passivated AlInN/GaN HEMTs with f(T)/f(MAX) >= 205 GHz, a performance enabled by the careful shaping of the gate electrode profile and the use of a thin 60-nm SiN encapsulation film.
Type
research article
Web of Science ID
WOS:000295340300016
Authors
Tirelli, Stefano
•
Marti, Diego
•
Sun, Haifeng
•
Alt, Andreas R.
•
•
•
Bolognesi, C. R.
Publication date
2011
Published in
Volume
32
Start page
1364
End page
1366
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
December 16, 2011
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