Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates
In this paper we introduce a new paradigm for nanowire growth that explains the unwanted appearance of parasitic nonvertical nanowires. With a crystal structure polarization analysis of the initial stages of GaAs nanowire growth on Si substrates, we demonstrate that secondary seeds form due to a three-dimensional twinning phenomenon. We derive the geometrical rules that underlie the multiple growth directions observed experimentally. These rules help optimizing nanowire array devices such as solar or water splitting cells or of more complex hierarchical branched nanowire devices.
Keywords: Nanowires ; three-dimensional twinning ; nanowire growth mechanisms ; III-V on silicon ; epitaxy ; polarity ; Iii-V Nanowires ; Inas Nanowires ; Photovoltaic Applications ; Semiconductor Nanowires ; Epitaxial-Growth ; Silicon ; Images
Record created on 2011-12-16, modified on 2016-08-09