Loading...
conference paper
Nanowire based heterostructures: Fundamental properties and applications
2011
Nanoepitaxy: Materials And Devices Iii
In this paper the fundamental properties of heterostructures based on semiconductor nanowires synthesized with molecular beam epitaxy are reviewed. Special focus is given on surface passivation mechanisms with radial epitaxial passivation shells. The growth of radial p-i-n junctions in GaAs nanowires is discussed. Characterization of such nanowires on a single nanowire level is presented. The fundamental limits of single nanowire optical device performance are obtained by numerical simulation and discussed.
Loading...
Name
Heiss-SPIE-Proceedings2011-reduced size.pdf
Type
Publisher's version
Access type
openaccess
Size
661.36 KB
Format
Adobe PDF
Checksum (MD5)
bf014806b891ce294da5bf9987392f86