Advances, Challenges and Opportunities in 3D CMOS Sequential Integration

3D sequential integration enables the full use of the third dimension thanks to its high alignment performance. In this paper, we address the major challenges of 3D sequential integration: in particular, the control of molecular bonding allows us to obtain pristine quality top active layer. With the help of Solid Phase Epitaxy, we can match the performance of top FET, processed at low temperature (600°C), with the bottom FET devices. Finally, the development of a stable salicide enables to retain bottom performance after top FET processing. Overcoming these major technological issues offers a wide range of applications.


Published in:
Proceedings of the IEEE International Electron Devices Meeting (IEDM)
Presented at:
IEEE International Electron Devices Meeting (IEDM), Washington DC, USA, December 5-7, 2011
Year:
2011
Keywords:
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 Record created 2011-12-12, last modified 2018-03-17

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