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research article

Monolithic integration of Si nanowires with metallic electrodes: NEMS resonator and switch applications

Arkan, Evren Fatih
•
Sacchetto, Davide  
•
Yildiz, Izzet
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2011
Journal of Micromechanics and Microengineering

The challenge of wafer-scale integration of silicon nanowires into microsystems is addressed by developing a fabrication approach that utilizes a combination of Bosch-process-based nanowire fabrication with surface micromachining and chemical-mechanical-polishing-based metal electrode/contact formation. Nanowires up to a length of 50 mu m are achieved while retaining submicron nanowire-to-electrode gaps. The scalability of the technique is demonstrated through using no patterning method other than optical lithography on conventional SOI substrates. Structural integrity of double-clamped nanowires is evaluated through a three-point bending test, where good clamping quality and fracture strengths approaching the theoretical strength of the material are observed. Resulting devices are characterized in resonator and switch applications-two areas of interest for CMOS-compatible solutions-with all-electrical actuation and readout schemes. Improvements and tuning of obtained performance parameters such as resonance frequency, quality factor and pull-in voltage are simply a question of conventional design and process adjustments. Implications of the proposed technique are far-reaching including system-level integration of either single-nanowire devices within thick Si layers or nanowire arrays perpendicular to the plane of the substrate.

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Type
research article
DOI
10.1088/0960-1317/21/12/125018
Web of Science ID

WOS:000298080100018

Author(s)
Arkan, Evren Fatih
Sacchetto, Davide  
Yildiz, Izzet
Leblebici, Yusuf  
Alaca, B. Erdem
Date Issued

2011

Publisher

Institute of Physics

Published in
Journal of Micromechanics and Microengineering
Volume

21

Issue

12

Article Number

125018

Subjects

Stress-Limited Oxidation

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Single-Crystal Silicon

•

Nanomechanical Resonators

•

Cmos Process

•

Fabrication

•

Devices

•

Growth

•

Temperature

•

Technology

•

Substrate

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LSM  
Available on Infoscience
November 23, 2011
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/72751
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