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  4. Optics, morphology, and growth kinetics of GaAs/Al_{x}Ga_{1-x}As quantum wells grown on vicinal substrates by metalorganic vapor phase epitaxy
 
research article

Optics, morphology, and growth kinetics of GaAs/Al_{x}Ga_{1-x}As quantum wells grown on vicinal substrates by metalorganic vapor phase epitaxy

Moret, N.  
•
Oberli, D.  
•
Pelucchi, E.  
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2011
Physical Review B

The effect of the miscut angle of vicinal substrate on the optical and morphological properties of GaAs/AlxGa1-xAs quantum wells grown by metalorganic vapor phase epitaxy is studied by means of photoluminescence (PL) and atomic force microscopy. Within small changes of the miscut angle, we observe strong variations of the PL linewidth, energy, and lineshape, as well as transitions between the morphology of the sample's surface and interface. The relation between these features is discussed, and the particular case of structures exhibiting high optical quality is studied in more detail. Moreover, the role of growth dynamics is highlighted by observing the evolution of the hetero-interfaces during growth interruption.

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Type
research article
DOI
10.1103/PhysRevB.84.155311
Web of Science ID

WOS:000296288000014

Author(s)
Moret, N.  
Oberli, D.  
Pelucchi, E.  
Gogneau, N.  
Rudra, A.  
Kapon, E.  
Date Issued

2011

Published in
Physical Review B
Volume

84

Issue

15

Article Number

155311

Subjects

Molecular-Beam Epitaxy

•

Interface Roughness

•

Photoluminescence Linewidth

•

Semiconductor Interfaces

•

Exciton Localization

•

Atomically Smooth

•

Crystal Surfaces

•

Step Motion

•

Gaas

•

Algaas

Editorial or Peer reviewed

NON-REVIEWED

Written at

EPFL

EPFL units
LPN  
Available on Infoscience
November 11, 2011
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/72443
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