Low voltage electrostatic 90° turning flap for reflective MEMS display

A low voltage electrostatically actuated 90° turning flap is modeled and fabricated. The application is a new kind reflective, low-power, MEMS-based display with high contrast and reflectance. The system consists of a poly-silicon flap fabricated onto a silicon substrate with a transparent counter electrode on glass and a device layer of a silicon-on-insulator (SOI) wafer as spacer in between them. Actuation voltages down to 20V are achieved.


Published in:
Proceedings of International Conference on Optical MEMS and Nanophotonics, 77-78
Presented at:
Optical MEMS & Nanophotonics, Sapporo, Japan, August 9-12, 2010
Year:
2010
Publisher:
IEEE
Laboratories:




 Record created 2011-11-11, last modified 2018-01-28


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