AC analysis of defect cross sections using non-radiative MPA quantum model

• Presented at: 12th International Conference on Ultimate Integration on Silicon (ULIS), Cork, Ireland, March 14-16, 2011
• Published in: Proceedings of the 12th International Conference on Ultimate Integration on Silicon (ULIS), p. 88-91
• Publication date: 2011

A multiphonon-assisted model included in a Poisson-Schroedinger solver has been applied for the calculation of the capture/emission trapping rates of Si/SiO2 interface defects and their dependence with respect to the trap energy and depth in the oxide. The accurate trap cross-sections extracted with this approach permit compact modeling engineers to evaluate the accuracy of constant cross-section models. The model has been applied to extract the trap concentration and frequency response, comparing AC simulations with measurements. © 2011 IEEE.

Keywords: trap cross-section ; multiphonon trapping model ; AC analysis

Reference

• EPFL-CONF-169914
• doi:10.1109/ULIS.2011.5757973

Record created on 2011-11-01, modified on 2017-05-10