AC analysis of defect cross sections using non-radiative MPA quantum model

A multiphonon-assisted model included in a Poisson-Schroedinger solver has been applied for the calculation of the capture/emission trapping rates of Si/SiO2 interface defects and their dependence with respect to the trap energy and depth in the oxide. The accurate trap cross-sections extracted with this approach permit compact modeling engineers to evaluate the accuracy of constant cross-section models. The model has been applied to extract the trap concentration and frequency response, comparing AC simulations with measurements. © 2011 IEEE.


Published in:
Proceedings of the 12th International Conference on Ultimate Integration on Silicon (ULIS), 88-91
Presented at:
12th International Conference on Ultimate Integration on Silicon (ULIS), Cork, Ireland, March 14-16, 2011
Year:
2011
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 Record created 2011-11-01, last modified 2018-03-17

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