Loading...
conference paper
Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs
2011
Device Research Conference (DRC), 2011 69th Annual
In this work we report an experimental study on accumulation-mode (AM) gate-all-around (GAA) nMOSFETs based on silicon nanowires with uniaxial tensile strain. Their electrical characteristics are studied from room temperature up to ~400 K and carrier mobility, flat-band and threshold voltages are extracted and investigated.
Loading...
Name
Najmzadeh-DRC2011.pdf
Access type
openaccess
Size
1.02 MB
Format
Adobe PDF
Checksum (MD5)
0eb4eff66ae3c94226e1d18f7a227c01