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research article
High-quality 1.3 lm-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates
We investigated the composition and optical properties of GaInAsN/GaAs single quantum wells (QWs) grown on vicinal-(001) GaAs substrates using metallorganic vapor phase epitaxy with modulated nitrogen-precursor flux. A significant enhancement in N incorporation and photoluminescence efficiency is achieved with such optimized QW structures. Possible mechanisms of the observed increase in N uptake and reduction in defect density, related to the substrate vicinality, are discussed.
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Type
research article
Web of Science ID
WOS:000294208900033
Authors
Publication date
2011
Publisher
Published in
Volume
99
Issue
7
Article Number
2116
Peer reviewed
NON-REVIEWED
EPFL units
Available on Infoscience
September 28, 2011