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  4. High-quality 1.3 lm-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates
 
research article

High-quality 1.3 lm-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates

Fekete, Dan
•
Carron, Romain  
•
Gallo, Pascal  
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2011
Applied Physics Letters

We investigated the composition and optical properties of GaInAsN/GaAs single quantum wells (QWs) grown on vicinal-(001) GaAs substrates using metallorganic vapor phase epitaxy with modulated nitrogen-precursor flux. A significant enhancement in N incorporation and photoluminescence efficiency is achieved with such optimized QW structures. Possible mechanisms of the observed increase in N uptake and reduction in defect density, related to the substrate vicinality, are discussed.

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Type
research article
DOI
10.1063/1.3623478
Web of Science ID

WOS:000294208900033

Author(s)
Fekete, Dan
Carron, Romain  
Gallo, Pascal  
Dwir, Benjamin  
Rudra, Alok  
Kapon, Elyahou  
Date Issued

2011

Publisher

American Institute of Physics

Published in
Applied Physics Letters
Volume

99

Issue

7

Article Number

2116

Subjects

Photoluminescence

•

Deposition

•

Gainnas

Editorial or Peer reviewed

NON-REVIEWED

Written at

EPFL

EPFL units
LPN  
Available on Infoscience
September 28, 2011
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/71163
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