High-quality 1.3 lm-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates

• Published in: Applied Physics Letters (ISSN: 0003-6951), vol. 99, num. 7, p. 2116
• American Institute of Physics, 2011

We investigated the composition and optical properties of GaInAsN/GaAs single quantum wells (QWs) grown on vicinal-(001) GaAs substrates using metallorganic vapor phase epitaxy with modulated nitrogen-precursor flux. A significant enhancement in N incorporation and photoluminescence efficiency is achieved with such optimized QW structures. Possible mechanisms of the observed increase in N uptake and reduction in defect density, related to the substrate vicinality, are discussed.

Keywords: Photoluminescence ; Deposition ; Gainnas

Reference

• EPFL-ARTICLE-169001
• doi:10.1063/1.3623478
• View record in Web of Science

Record created on 2011-09-28, modified on 2017-05-12