000168226 001__ 168226
000168226 005__ 20190316235201.0
000168226 0247_ $$2doi$$a10.1109/TNANO.2010.2089532
000168226 022__ $$a1536-125X
000168226 02470 $$2ISI$$a000292966400036
000168226 037__ $$aARTICLE
000168226 245__ $$aPolysilicon Nanowire Transistors and Arrays Fabricated With the Multispacer Technique
000168226 260__ $$bInstitute of Electrical and Electronics Engineers$$c2011
000168226 269__ $$a2011
000168226 336__ $$aJournal Articles
000168226 520__ $$aIn this paper, we demonstrate the ability of the multi- spacer patterning technique to yield layers of polycrystalline silicon nanowires with a sublithographic pitch, by exclusively using micrometer resolution and CMOS processing steps. We characterize single spacers operating as poly-Si nanowire field effect transistors . We demonstrate also the possibility to lay a spacer perpendicularly to a set of parallel spacers in a crossbar fashion. The extrapolated cross-point density from the small 4 × 1-array is in the range of 10 exp10	cm−2 .	We	discuss the applications of this technique to improve the density of previously reported poly-SiNW memories and as a future framework for nanowire crossbars and decoders. Then we analyze the limitations and costs of the proposed technique.
000168226 6531_ $$aCrossbar circuits
000168226 6531_ $$adecoder design
000168226 6531_ $$amemory
000168226 6531_ $$asilicon nanowires
000168226 6531_ $$aspacer technique
000168226 700__ $$0240267$$aBen Jamaa, Haykel$$g169539
000168226 700__ $$aCerofolini, Gianfranco
000168226 700__ $$0240269$$aDe Micheli, Giovanni$$g167918
000168226 700__ $$0240162$$aLeblebici, Yusuf$$g112194
000168226 773__ $$j10$$k4$$q891-899$$tIEEE Transactions on Nanotechnology
000168226 8564_ $$s1136218$$uhttps://infoscience.epfl.ch/record/168226/files/05607312.pdf$$yn/a$$zn/a
000168226 909C0 $$0252051$$pLSM$$xU10325
000168226 909C0 $$0252283$$pLSI1$$xU11140
000168226 909CO $$ooai:infoscience.tind.io:168226$$pSTI$$pIC$$particle$$qGLOBAL_SET
000168226 917Z8 $$x112915
000168226 917Z8 $$x112915
000168226 917Z8 $$x112915
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000168226 937__ $$aEPFL-ARTICLE-168226
000168226 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000168226 980__ $$aARTICLE