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research article
8 mW fundamental mode output of wafer-fused VCSELs emitting in the 1550-nm band
2011
We report record-high fundamental mode output power of 8 mW at 0 °C and 1.5 mW at 100°C achieved with wafer-fused InAlGaAs-InP/AlGaAs-GaAs 1550 nm VCSELs incorporating a re-grown tunnel junction and un-doped AlGaAs/GaAs distributed Bragg reflectors. A broad wavelength tuning range of 15 nm by current variation and wavelength setting in a spectral range of 40 nm on the same VCSEL wafer are demonstrated as well. This performance positions wafer-fused VCSELs as prime candidates for many applications in low power consumption, “green” photonics.
Type
research article
Web of Science ID
WOS:000294489700026
Publication date
2011
Published in
Volume
19
Issue
18
Article Number
16996
Subjects
Peer reviewed
NON-REVIEWED
EPFL units
Available on Infoscience
August 17, 2011
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