8 mW fundamental mode output of wafer-fused VCSELs emitting in the 1550-nm band

We report record-high fundamental mode output power of 8 mW at 0 °C and 1.5 mW at 100°C achieved with wafer-fused InAlGaAs-InP/AlGaAs-GaAs 1550 nm VCSELs incorporating a re-grown tunnel junction and un-doped AlGaAs/GaAs distributed Bragg reflectors. A broad wavelength tuning range of 15 nm by current variation and wavelength setting in a spectral range of 40 nm on the same VCSEL wafer are demonstrated as well. This performance positions wafer-fused VCSELs as prime candidates for many applications in low power consumption, “green” photonics.


Published in:
Optics Express, 19, 18, 16996
Year:
2011
Keywords:
Laboratories:




 Record created 2011-08-17, last modified 2018-03-17


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