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research article
High-Power 1.48-μm Wafer-Fused Optically Pumped Semiconductor Disk Laser
An output power up to 5 W at 1.48- m wavelength is achieved from an optically pumped semiconductor disk laser. An active region composed of an AlGaInAs/InP heterostructure grown on an InP substrate was wafer fused with an AlGaAs/GaAs Bragg reflector grown on a GaAs substrate. An intracavity diamond heatspreader bonded to the gain structure surface provides efficient heat removal from the active element. The results further validate that the wafer fusion technique offers a flexible platform for high-power disk lasers in a wide wavelength range.
Type
research article
Web of Science ID
WOS:000291678300004
Authors
Lyytikäinen, J.
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Rautiainen, J.
•
•
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Laakso, N.
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Ranta, S.
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Tavast, M.
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•
Okhotnikov, O. G.
Publication date
2011
Published in
Volume
23
Issue
13
Start page
917
Peer reviewed
NON-REVIEWED
EPFL units
Available on Infoscience
July 1, 2011
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