Ambipolar Si Nanowire Field Effect Transistors for Low Current and Temperature Sensing

This paper reports on the fabrication and characterization of a pA current and temperature sensing device with ultra-low power consumption based on a Schottky barrier silicon nanowire transistor. Thermionic and trap-assisted tunneling current conduction mechanisms are identified and discussed on the base of the device sensitivity upon current and temperature biasing. In particular, very low current sensing properties are confirmed also with previously reported polysilicon- channel nanowire Schottky barrier transistors. demonstrating that these devices are suitable for temperature and current sensing applications. Moreover, the process flow compatibility for both sensing and logic applications makes these devices suitable for heterogeneous integration.


Publié dans:
Proceedings of the 16th International Conference on Solid-State Sensors, Actuators and Microsystems
Présenté à:
16th International Conference on Solid-State Sensors, Actuators and Microsystems, Beijing, China, June 5-9, 2011
Année
2011
Mots-clefs:
Laboratoires:




 Notice créée le 2011-05-19, modifiée le 2019-03-16

Publisher's version:
Télécharger le document
PDF

Évaluer ce document:

Rate this document:
1
2
3
 
(Pas encore évalué)