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conference paper
Die-Level TSV Fabrication Platform for CMOS-MEMS Integration
2011
Proceedings of the 16th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers 2011)
This paper reports a new post-CMOS processing platform for die-level through-silicon-via (TSV) fabrication, based on wafer reconstitution from embedded dies, parylene deposition, stencil lithography, and bottom-up electroplating. The goal of this work is to develop a heterogeneous 3D-integration technique for the applications requiring CMOS-MEMS integration with vertical interconnections.
Type
conference paper
Authors
Publication date
2011
Published in
Proceedings of the 16th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers 2011)
Start page
1799
End page
1802
Peer reviewed
REVIEWED
Event name | Event place | Event date |
Beijing, China | June 5-9, 2011 | |
Available on Infoscience
March 21, 2011
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