Spark protection layers for CMOS pixel anode chips in MPGDs

In this work we have investigated the functioning of high resistivity amorphous silicon and silicon-rich nitride layers as a protection against discharges in Micro-Patterned Gaseous Detectors (MPGDs). When the anode is protected by a high resistivity layer, discharge signals are limited in charge. A signal reduction is expected when the layers are too thick; simulations presented in this paper indicate that layers up to 10 μm thick can be applied without significantly degrading the detector performance. Layers of amorphous silicon and silicon-rich nitride have been deposited on top of Timepix and Medipix2 chips in GridPix detectors; with this, chips survive naturally occurring as well as intentionally produced discharges. © 2010 Elsevier B.V. All rights reserved.


Published in:
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 629, 1, 66-73
Year:
2011
Publisher:
Elsevier
ISSN:
01689002
Keywords:
Note:
IMT-NE Number: 595
Laboratories:


Note: The status of this file is: EPFL only


 Record created 2011-02-23, last modified 2018-03-17

Publisher's version:
Download fulltext
PDF

Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)