Low temperature pyrex/silicon wafer bonding via a single intermediate parylene layer

We introduce a new low temperature (280 °C) parylene-C wafer bonding technique, where parylene-C bonds directly a Pyrex wafer to a silicon wafer with either a Si, SiO2 or Si3N4 surface with a bonding strength up to 23 MPa. The technique uses a single layer of parylene-C deposited only on the Pyrex wafer. Moreover, the process is compatible for bonding any type of wafer with small-sized micropatterned features, or containing microfluidic channels and electrodes. This technique can be an alternative for conventional bonding methods like anodic bonding in applications requiring a low-temperature and diverse bonding interfaces.


Published in:
Proceedings of the 16th International Conference on Solid-State Sensors, Actuators and Microsystems, 366-369
Presented at:
The 16th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), Beijing, China, June 5-9, 2011
Year:
2011
Publisher:
IEEE
Keywords:
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 Record created 2011-02-21, last modified 2018-03-17

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