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research article

Pattern transfer and post processing of complex nanostructures formed by e-beam exposure in PMMA

Gautsch, S.  
•
de Rooij, N. F.  
2011
Microelectronic Engineering

We present results on various post processing techniques to create complex 3-dimensional nanostructures with enhanced capabilities. The starting point for all architectures is a self aligned nanopillar with surrounding circular rim in PMMA. This particular shape is obtained by the energy density distribution of incident and backscattered electrons of e-beam exposure and reflects the dual behavior of PMMA as positive and negative resist. Employing only 1 lithographic step and several batch processing techniques, we ensure that the creation of the complex shapes can be obtained in a reproducible manner without subsequent realignment steps. We propose several applications for these structures, covering a wide variety of research areas. (C) 2011 Elsevier B.V. All rights reserved.

  • Details
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Type
research article
DOI
10.1016/j.mee.2011.02.012
Web of Science ID

WOS:000293663400225

Author(s)
Gautsch, S.  
de Rooij, N. F.  
Date Issued

2011

Publisher

Elsevier

Published in
Microelectronic Engineering
Volume

88

Issue

8

Start page

2533

End page

2536

Subjects

e-Beam

•

Nanopillars

•

Self aligned

•

Pmma

•

Positive

•

Negative

•

Crosslinking

•

Carbonization

•

Nanostructures

•

Postprocessing

•

Drie

•

Pattern transfer

•

Field Emitters

Editorial or Peer reviewed

NON-REVIEWED

Written at

EPFL

EPFL units
SAMLAB  
Available on Infoscience
February 15, 2011
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/64331
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