Low-pressure chemical vapor deposition of copper: dependence of the selectivity on the water vapor added to a hydrogen or helium carrier gas
1992
Abstract
The selectivity of Cu deposition from bis(hexafluoroacetylacetonato)Cu(II) on SiO2 patterned with a Pt seeding layer was studied as a function of the reagent gas mixt. On Pt, the Cu film growth rate increases with the amt. of H2O vapor in the gas flow, and is independent of the chem. nature of the carrier gas used (H2 or He). The selectivity of the Cu deposition is significantly improved when using He rather than H2 as carrier gas, esp. at high H2O vapor concns. where rapid film growth can be obtained.
Details
Title
Low-pressure chemical vapor deposition of copper: dependence of the selectivity on the water vapor added to a hydrogen or helium carrier gas
Author(s)
Lecohier, B. ; Calpini, B. ; Philippoz, J. M. ; Van den Bergh, H.
Published in
Journal of Applied Physics
Volume
72
Issue
5
Pages
2022-2026
Date
1992
Keywords
Note
Copyright 2003 ACS
CAPLUS
AN 1992:623332
CAN 117:223332
75-1
Crystallography and Liquid Crystals
76
Lab. Chim. Tech.,Ec. Polytech. Fed. Lausanne,Lausanne,Switz. FIELD URL:
Journal
JAPIAU
written in English.
Vapor deposition processes (of copper films on silicon surface seeded with platinum, from bis(hexafluoroacetylacetonato)copper decompn.)
CAPLUS
AN 1992:623332
CAN 117:223332
75-1
Crystallography and Liquid Crystals
76
Lab. Chim. Tech.,Ec. Polytech. Fed. Lausanne,Lausanne,Switz. FIELD URL:
Journal
JAPIAU
written in English.
Vapor deposition processes (of copper films on silicon surface seeded with platinum, from bis(hexafluoroacetylacetonato)copper decompn.)
Laboratories
LPAS
Record Appears in
Scientific production and competences > ENAC - School of Architecture, Civil and Environmental Engineering > ENAC Archives > LPAS - Air and Soil Pollution Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2011-02-01